| PART |
Description |
Maker |
| M4A3-512_256-10FAC M4A5-96/48-10VC M4A5-96/48-10VI |
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 5.5 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 10 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP144
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP48
CONNECTOR ACCESSORY
CAP 1500UF 100V ELECT KMH SNAP
High Performance E 2 CMOS In-System Programmable Logic
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| PALCE16V8H-5SC PALCE16V8H-5SI PALCE16V8H-5SI4 PALC |
CAP 47PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 47PF 200V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
EE CMOS Zero-Power 20-Pin Universal Programmable Array Logic
EE CMOS 20-Pin Universal Programmable Array Logic 电子工程的CMOS 20引脚通用可编程阵列逻辑
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 20 ns, PDIP20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 25 ns, PQCC20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 25 ns, PDIP20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 15 ns, PQCC20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 15 ns, PDIP20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 20 ns, PQCC20
CAP 47PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR 电子工程的CMOS 20引脚通用可编程阵列逻辑
CAP 47PF 100V 5% NP0(C0G) SMD-1206 SN-NIBAR SPECIAL PKG 电子工程的CMOS 20引脚通用可编程阵列逻辑
8 BIT MCU W/8K FLASH
|
Advanced Micro Devices, Inc.
Lattice Semiconductor, Corp.
ADVANCED MICRO DEVICES INC
|
| M4-96/48-10JI M4-96/48-10VC M4-96/48-10VI M4-96/48 |
D52 - GLENAIR EE PLD, 10 ns, PQFP100
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 10 ns, PQFP208
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 10 ns, PQFP48
INDUSTRIAL TO RJ45 CAT6 PATCH CORD 5FT
CONNECTOR ACCESSORY
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| GAL16V8S GAL16V8S-20EC1 GAL16V8S-20EB1 GAL16V8S-20 |
EPROM CMOS Programmable Logic Device
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE
|
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| EPM3128A EPM3064ATI44-10N EPM3512AQI208-10 EPM3064 |
Programmable Logic Device Family
High?performance, low?cost CMOS EEPROM?based programmable
Built?in boundary-scan test circuitry compliant with
|
Altera Corporation
|
| SI3241 SI3203 SI3206 |
Quad ProSLIC? Programmable CMOS SLIC/Codec
Quad ProSLIC㈢ Programmable CMOS SLIC/Codec
|
Silicon Laboratories
|
| SI3245 SI3203 |
Quad ProSLIC? Programmable CMOS SLIC/Codec
Quad ProSLIC㈢ Programmable CMOS SLIC/Codec
|
Silicon Laboratories
|
| PLS167-33 PLS167-33CFN PLS167-33CJS PLS167-33CNS P |
24-PIN TTL/CMOS PROGRAMMABLE LOGIC SEQUENCERS OT PLD, 12 ns, PQCC28
24-PIN TTL/CMOS PROGRAMMABLE LOGIC SEQUENCERS OT PLD, 12 ns, PDIP24
24-PIN TTL/CMOS PROGRAMMABLE LOGIC SEQUENCERS EE PLD, 12 ns, PDIP24
|
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| LH532100B- LH532100B-1 LH532100BD-1 LH532100BN-1 L |
CMOS 2M(256K x 8) Mask-Programmable ROM
CMOS 2M (256K x 8) MROM
|
SHARP[Sharp Electrionic Components]
|
| KCEXO3A |
Programmable CMOS/ 5.0V
|
Kyocera Kinseki Corpotation
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
